Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Toshiba Semiconductor and Storage GT60N321(Q)

IGBT 1000V 60A 170W TO3P LH

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Toshiba Semiconductor and Storage GT10J312(Q)

IGBT 600V 10A 60W TO220SM

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Toshiba Semiconductor and Storage GT10G131(TE12L,Q)

IGBT 400V 1W 8-SOIC

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ON Semiconductor FGA50N100BNTTU

IGBT 1000V 50A 156W TO3P

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STMicroelectronics STGW45NC60WD

IGBT 600V 90A 285W TO247

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STMicroelectronics STGB18N40LZ-1

IGBT 420V 30A 150W I2PAK

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ON Semiconductor FGH30N120FTDTU

IGBT 1200V 60A 339W TO247

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Infineon Technologies IRGSL4062DPBF

IGBT 600V 48A 250W TO262

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