Toshiba Semiconductor and Storage GT60N321(Q)

Product Details

Package / Case

8-TSSOP (0.173", 4.40mm Width)

Test Condition

-

Switching Energy

-

Td (on/off) @ 25°C

1.7µs/2µs

Operating Temperature

150°C (TJ)

Series

-

Supplier Device Package

8-TSSOP

IGBT Type

-

Vce(on) (Max) @ Vge, Ic

2.9V @ 4V, 150A

Packaging

Tape & Reel (TR)

Current - Collector Pulsed (Icm)

150A

Input Type

Standard

Voltage - Collector Emitter Breakdown (Max)

400V

Part Status

Obsolete

Power - Max

600mW

Mounting Type

Surface Mount