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Toshiba Semiconductor and Storage GT10G131(TE12L,Q)

IGBT 400V 1W 8-SOIC

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
0

Product Details

Test Condition
300V, 10A, 100Ohm, 15V
Base Part Number
GT10
Switching Energy
-
Td (on/off) @ 25°C
400ns/400ns
Series
-
Operating Temperature
150°C (TJ)
IGBT Type
-
Supplier Device Package
TO-220SM
Packaging
Tube
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Input Type
Standard
Reverse Recovery Time (trr)
200ns
Part Status
Obsolete
Current - Collector (Ic) (Max)
10A
Power - Max
60W
Current - Collector Pulsed (Icm)
20A
Mounting Type
Surface Mount
Voltage - Collector Emitter Breakdown (Max)
600V
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63