Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.


ON Semiconductor FGPF70N33BTTU

IGBT 330V 48W TO220F

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ON Semiconductor FGP5N60UFDTU

IGBT 600V 10A 81W TO220

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ON Semiconductor HGT1S3N60A4DS9A

IGBT 600V 17A 70W D2PAK

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ON Semiconductor FGPF30N30TDTU

IGBT 300V 44.6W TO220F

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ON Semiconductor FGA70N30TDTU

IGBT 300V 201W TO3P

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ON Semiconductor FGI40N60SFTU

IGBT 600V 80A 290W I2PAK

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Infineon Technologies IRG4RC10UDTRP

IGBT 600V 8.5A 38W DPAK

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Infineon Technologies IRG4RC20FTRPBF

IGBT 600V 22A 66W DPAK

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