Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRGB4059DPBF

IGBT 600V 8A 56W TO220AB

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Infineon Technologies IRGSL30B60KPBF

IGBT 600V 78A 370W TO262

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Infineon Technologies IRG4RC10STRRPBF

IGBT 600V 14A 38W DPAK

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ON Semiconductor FGA90N33ATTU

IGBT 330V 90A 223W TO3P

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ON Semiconductor FGA90N33ATDTU

IGBT 330V 90A 223W TO3P

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Infineon Technologies IRGI4062DPBF

IGBT 600V 22A 48W TO220AB

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Infineon Technologies IRGI4061DPBF

IGBT 600V 20A 43W TO220FP

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Infineon Technologies IRGI4059DPBF

IGBT TO220AB

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