Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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STMicroelectronics STGD8NC60KT4

IGBT 600V 15A 62W DPAK

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STMicroelectronics STGB20NC60V

IGBT 600V 60A 200W D2PAK

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STMicroelectronics STGW30N120KD

IGBT 1200V 60A 220W TO247

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ON Semiconductor HGT1S12N60A4S9A

IGBT 600V 54A 167W TO263AB

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ON Semiconductor HGT1S7N60A4DS

IGBT 600V 34A 125W TO263AB

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STMicroelectronics STGW35NC60WD

IGBT 600V 70A 260W TO247

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STMicroelectronics STGW30N90D

IGBT 900V 60A 220W TO247

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STMicroelectronics STGW19NC60WD

IGBT 600V 42A 125W TO247

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