Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4RC20FPBF

IGBT 600V 22A 66W DPAK

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Infineon Technologies IRGI4085-111PBF

IGBT 330V 28A 38W TO220ABFP

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Infineon Technologies IRGS30B60KPBF

IGBT 600V 78A 370W D2PAK

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Infineon Technologies IRGIB6B60KD116P

IGBT 600V 11A 38W TO220FP

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Infineon Technologies IRGR3B60KD2PBF

IGBT 600V 7.8A 52W DPAK

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Infineon Technologies IRG4RC10SDPBF

IGBT 600V 14A 38W DPAK

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Infineon Technologies IRG4RC10UDPBF

IGBT 600V 8.5A 38W DPAK

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Infineon Technologies IRG4PF50WD-201P

IGBT 900V 51A 200W TO247AC

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