Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4RC10SPBF

IGBT 600V 14A 38W DPAK

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Infineon Technologies IRG4RC10UPBF

IGBT 600V 8.5A 38W DPAK

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Infineon Technologies IRG4PC40KDE206P

IGBT 600V 42A 160W TO247AC

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ON Semiconductor FGA15N120FTDTU

IGBT 1200V 30A 220W TO3PN

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ON Semiconductor FGPF45N45TTU

IGBT 450V 51.6W TO220F

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ON Semiconductor FGA70N30TTU

IGBT 300V 201W TO3P

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ON Semiconductor NGB8207NT4G

IGBT 365V 20A 165W D2PAK

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ON Semiconductor FGPF30N45TTU

IGBT 450V 50.4W TO220F

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