Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4PH50S-EPBF

IGBT 1200V 57A 200W TO247AD

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Infineon Technologies IRG4PC50FD-EPBF

IGBT 600V 70A 200W TO247AD

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Infineon Technologies IRG6I330U-168P

IGBT 330V 28A 43W TO220ABFP

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Infineon Technologies IRG6I330U-111P

IGBT 330V 28A 43W TO220ABFP

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STMicroelectronics STGP14N60D

IGBT 600V 25A 95W TO220

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STMicroelectronics STGF14N60D

IGBT 600V 11A 33W TO220FP

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Toshiba Semiconductor and Storage GT50J121(Q)

IGBT 600V 50A 240W TO3P LH

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Toshiba Semiconductor and Storage GT8G133(TE12L,Q)

IGBT 400V 600MW 8TSSOP

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