Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRGI4090PBF

IGBT 300V 21A 34W TO220ABFP

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Infineon Technologies IRGI4060DPBF

IGBT 600V 14A 37W TO220ABFP

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Infineon Technologies IRGI4045DPBF

IGBT 600V 11A 33W TO220ABFP

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Infineon Technologies IRG7PH42UPBF

IGBT 1200V 90A 385W TO247AC

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Infineon Technologies IRG7PH42U-EP

IGBT 1200V 90A 385W TO247AD

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Infineon Technologies IRG7PH42UD-EP

IGBT 1200V 85A 320W TO247AD

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Infineon Technologies IRG6I330UPBF

IGBT 330V 28A 43W TO220ABFP

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Infineon Technologies IRG6I320UPBF

IGBT 330V 24A 39W TO220ABFP

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