Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGH15N120BD1

IGBT 1200V 30A 150W TO247AD

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IXYS IXGH15N120B2D1

IGBT 1200V 30A 192W TO247AD

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IXYS IXGH12N60CD1

IGBT 600V 24A 100W TO247AD

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IXYS IXGH12N60C

IGBT 600V 24A 100W TO247AD

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IXYS IXGH12N60BD1

IGBT 600V 24A 100W TO247AD

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IXYS IXGH12N60B

IGBT 600V 24A 100W TO247AD

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IXYS IXGA90N33TC

IGBT 330V 90A 200W TO263AA

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IXYS IXGA24N60C

IGBT 600V 48A 150W TO263AA

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