Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGA20N60B

IGBT 600V 40A 150W TO263AA

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IXYS IXGA150N30TC

IGBT 300V 150A TO263AA

0

IXYS IXGA12N60C

IGBT 600V 24A 100W TO263AA

0

IXYS IXGA12N60BD1

IGBT 600V 24A 100W TO263AA

0

IXYS IXGA12N60B

IGBT 600V 24A 100W TO263AA

0

IXYS IXGA12N100

IGBT 1000V 24A 100W TO263AA

0

IXYS IXGA120N30TC

IGBT 300V 120A 250W TO263AA

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Infineon Technologies IRGP4072DPBF

IGBT 300V 70A 180W TO247AC

0