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Toshiba Semiconductor and Storage GT8G133(TE12L,Q)

IGBT 400V 600MW 8TSSOP

Manufacturer
Toshiba Semiconductor and Storage
Datasheet
Price
0
Stock
0

Product Details

Series
-
Supplier Device Package
TO-3P(LH)
IGBT Type
-
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 50A
Packaging
Tube
Current - Collector (Ic) (Max)
50A
Input Type
Standard
Current - Collector Pulsed (Icm)
100A
Part Status
Obsolete
Voltage - Collector Emitter Breakdown (Max)
600V
Power - Max
240W
Mounting Type
Through Hole
Package / Case
TO-3PL
Test Condition
300V, 50A, 13Ohm, 15V
Switching Energy
1.3mJ (on), 1.34mJ (off)
Td (on/off) @ 25°C
90ns/300ns
Operating Temperature
150°C (TJ)