Toshiba Semiconductor and Storage GT10J312(Q)

Product Details

Input Type

Standard

Reverse Recovery Time (trr)

2.5µs

Part Status

Obsolete

Current - Collector (Ic) (Max)

60A

Power - Max

170W

Current - Collector Pulsed (Icm)

120A

Mounting Type

Through Hole

Voltage - Collector Emitter Breakdown (Max)

1000V

Package / Case

TO-3PL

Test Condition

-

Base Part Number

GT60

Switching Energy

-

Td (on/off) @ 25°C

330ns/700ns

Series

-

Operating Temperature

150°C (TJ)

IGBT Type

-

Supplier Device Package

TO-3P(LH)

Packaging

Tube

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 60A