Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor FGA50S110P

IGBT 1100V 50A 300W TO3PN

2.14

Infineon Technologies IKB30N65EH5ATMA1

INDUSTRY 14

2.13

IXYS IXDH35N60BD1

IGBT 600V 60A 250W TO247AD

2.1

ON Semiconductor HGTG7N60A4D

IGBT 600V 34A 125W TO247

2.09

STMicroelectronics STGWT20H60DF

IGBT 600V 40A 167W TO3PF

2.07

Infineon Technologies IKP20N60TAHKSA1

IGBT 600V 40A 166W TO220-3-1

2.06

ON Semiconductor FGA30T65SHD

IGBT 650V 60A 238W TO-3PN

2.06

Infineon Technologies IRG4BC40KPBF

IGBT 600V 42A 160W TO220AB

2.06