Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies AUIRG4BC30SSTRL

IGBT 600V 34A 100W D2PAK

2.19

ON Semiconductor FGB3040CS

IGBT 430V 21A 150W TO263-6

0

ON Semiconductor NGTD28T65F2SWK

IGBT TRENCH FIELD STOP 650V DIE

2.19

IXYS IXGA12N120A2

IGBT 1200V 24A 75W TO263

2.18

ON Semiconductor NGTB30N65IHL2WG

IGBT 600V 70A 300W TO247

2.16

IXYS IXA12IF1200PB

IGBT 1200V 20A 85W TO220

2.15

ON Semiconductor NGTD28T65F2WP

IGBT TRENCH FIELD STOP 650V DIE

2.15

Infineon Technologies IKB30N65ES5ATMA1

INDUSTRY 14

2.13