Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

STMicroelectronics STGWF30NC60S

IGBT 600V 35A 79W TO3P

2.35

ON Semiconductor FGA6530WDF

IGBT 650V 60A 176W TO3PN

2.35

Alpha & Omega Semiconductor Inc. AOK20B65M1

IGBT 650V 20A TO-247

2.34

Infineon Technologies IGW03N120H2FKSA1

IGBT 1200V 9.6A 62.5W TO247-3

2.34

IXYS IXGA7N60B

IGBT 600V 14A 54W TO263

2.34

IXYS IXYP15N65C3D1

IGBT 650V 38A 200W TO220

2.31

IXYS IXGQ85N33PCD1

IGBT 330V 85A 150W TO3P

2.31

ON Semiconductor NGTD30T120F2SWK

IGBT TRENCH FIELD STOP 1200V DIE

2.31