Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor NGTB50N60L2WG

IGBT 600V 50A TO247

2.29

STMicroelectronics STGFW30V60F

IGBT 600V 60A 58W TO3PF

2.27

IXYS IXGH42N30C3

IGBT 300V 223W TO247

2.23

IXYS IXYY8N90C3

IGBT 900V 20A 125W C3 TO-252

2.23

IXYS IXYP15N65C3

IGBT 650V 38A 200W TO220

2.23

STMicroelectronics STGWA30H65DFB

IGBT

2.23

Infineon Technologies IRG4IBC30KDPBF

IGBT 600V 17A 45W TO220FP

2.2

Infineon Technologies AUIRG4BC30USTRL

IGBT 600V 23A 100W D2PAK

2.19