Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IHW15N120R3FKSA1

IGBT 1200V 30A 254W TO247-3

2.54

STMicroelectronics STGWT20IH125DF

IGBT 1250V 40A 259W TO-3P

2.53

Infineon Technologies IRG4PC30FPBF

IGBT 600V 31A 100W TO247AC

2.52

IXYS IXYP20N65C3D1

IGBT 650V 18A 50W TO220

2.52

IXYS IXYP20N65C3D1M

IGBT 650V 18A 50W TO220

2.52

Sanken MGD623S

IGBT 600V 50A 150W TO3P

2.52

IXYS IXXP12N65B4D1

IGBT

2.43

Infineon Technologies IGW08T120FKSA1

IGBT 1200V 16A 70W TO247-3

2.43