Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Alpha & Omega Semiconductor Inc. AOK20B120E1

IGBT 1200V 20A TO247

2.57

IXYS IXYP10N65C3D1

IGBT 650V 30A 160W TO-220

2.57

ON Semiconductor FGA40S65SH

650V FS GEN3 TRENCH IGBT

2.56

Infineon Technologies IRGB15B60KDPBF

IGBT 600V 31A 208W TO220AB

2.56

IXYS IXGP12N120A3

IGBT 1200V 22A 100W TO220

2.55

IXYS IXGP12N120A2

IGBT 1200V 24A 75W TO220

2.55

Alpha & Omega Semiconductor Inc. AOK20B120E2

IGBT 1200V 20A TO-247

2.55

Infineon Technologies IRG4PC30SPBF

IGBT 600V 34A 100W TO247AC

2.54