Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IGC11T120T8LX1SA1

IGBT 1200V 8A SAWN ON FOIL

2.75

IXYS IXYH20N65C3

IGBT 650V 50A 230W TO247AD

2.74

ON Semiconductor FGH40T65SH-F155

IGBT 650V 80A 268W TO-247-3

2.71

IXYS IXGQ170N30PB

IGBT 300V 170A 330W TO3P

2.72

ON Semiconductor FGA30N65SMD

IGBT 650V 60A 300W TO3P-3

2.71

Infineon Technologies IRG4PH40KPBF

IGBT 1200V 30A 160W TO247AC

2.7

Infineon Technologies IRGB14C40LPBF

IGBT 430V 20A 125W TO220AB

2.7

Infineon Technologies IGW30N60H3FKSA1

IGBT 600V 60A 187W TO247-3

2.69