Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor SGH30N60RUFDTU

IGBT 600V 48A 235W TO3P

2.83

ON Semiconductor FGH40T65SHD-F155

IGBT 650V 80A 268W TO-247

2.82

IXYS IXGP2N100A

IGBT 1000V 4A 25W TO220AB

2.81

IXYS IXGP30N60B2

IGBT 600V 70A 190W TO220

2.81

ON Semiconductor SGH10N60RUFDTU

IGBT 600V 16A 75W TO3P

2.78

IXYS IXGA42N30C3

IGBT 300V 223W TO263AA

2.79

Sanken FGM622S

IGBT 600V 16A TO-3PF

2.78

Infineon Technologies IKW30N65WR5XKSA1

IGBT TRENCH 650V 60A TO247-3

2.77