Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies SGB15N120ATMA1

IGBT 1200V 30A 198W TO263-3

2.92

IXYS IXGH85N30C3

IGBT 300V 75A 333W TO247AD

2.91

IXYS IXYA20N65C3D1

IGBT

2.91

ON Semiconductor SGH20N60RUFDTU

IGBT 600V 32A 195W TO3P

2.9

Infineon Technologies IGW30N60TFKSA1

IGBT 600V 60A 187W TO247-3

2.9

Infineon Technologies IGP50N60TXKSA1

IGBT 600V 100A 333W TO220-3

2.87

IXYS IXGP4N100

IGBT 1000V 8A 40W TO220AB

2.86

IXYS IXGP42N30C3

IGBT 300V 223W TO220AB

2.84