Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXA20I1200PB

IGBT 1200V 33A 130W TO220

2.05

STMicroelectronics STGP10NB60SD

IGBT 600V 29A 80W TO220

2.01

ON Semiconductor FGA40T65SHDF

IGBT 650V 80A 268W TO-3PN

2

Infineon Technologies IRGS10B60KDTRRP

IGBT 600V 22A 156W D2PAK

2

Global Power Technologies Group GPI040A060MN-FD

IGBT 600V 80A 231W TO3PN

2

ON Semiconductor FGA6065ADF

IGBT 650V 120A 306W TO3P

1.99

ON Semiconductor NGTD23T120F2SWK

IGBT TRENCH FIELD STOP 1200V DIE

1.98

ON Semiconductor FGA180N33ATTU

IGBT 330V 180A 390W TO3P

1.98