Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IKB20N60TAATMA1

IGBT 600V 40A TO263-3

1.98

Infineon Technologies AIKP20N60CTAKSA1

IC DISCRETE 600V TO220-3

1.96

ON Semiconductor FGA20S125P-SN00336

IGBT 1250V 20A 250W TO-3PN

1.96

Infineon Technologies IRG4BC30KDPBF

IGBT 600V 28A 100W TO220AB

1.95

ON Semiconductor NGTB20N120IHTG

IGBT 1200V 20A TO247

1.94

ON Semiconductor NGTD23T120F2WP

IGBT TRENCH FIELD STOP 1200V DIE

1.94

ON Semiconductor AFGB30T65SQDN

650V/30A FS4 IGBT TO263 A

1.92

STMicroelectronics STGWA30H65FB

IGBT

1.92