Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor NGTB15N135IHRWG

IGBT 1350V 15A TO247-3

1.83

STMicroelectronics STGWT20HP65FB

IGBT

1.8

Infineon Technologies IKP20N65F5XKSA1

IGBT TRENCH 650V 42A TO220-3

1.8

Infineon Technologies IRG4PC30UPBF

IGBT 600V 23A 100W TO247AC

1.78

ON Semiconductor HGTP10N120BN

IGBT 1200V 35A 298W TO220AB

1.77

ON Semiconductor NGTD21T65F2WP

IGBT TRENCH FIELD STOP 650V DIE

1.77

STMicroelectronics STGWA20M65DF2

IGBT TRENCH 650V 40A TO247

1.74

Global Power Technologies Group GPA025A120MN-ND

IGBT 1200V 50A 312W TO3PN

1.73