Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Global Power Technologies Group GPA020A135MN-FD

IGBT 1350V 40A 223W TO3PN

1.73

Infineon Technologies IRGB20B60PD1PBF

IGBT 600V 40A 215W TO220AB

1.73

Infineon Technologies IGC07T120T8LX1SA2

IGBT 1200V 4A SAWN ON FOIL

1.71

Infineon Technologies IGP30N65H5XKSA1

IGBT TRENCH 650V 55A TO220-3

1.71

Infineon Technologies IGP30N65F5XKSA1

IGBT TRENCH 650V 55A TO220-3

1.71

STMicroelectronics STGB20V60DF

IGBT 600V 40A 167W D2PAK

0

Infineon Technologies IKP20N60H3XKSA1

IGBT 600V 40A 170W TO220-3

1.7

ON Semiconductor FGA4060ADF

IGBT 600V 80A 238W TO-3PN

1.7