Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGQ90N27PB

IGBT 270V 90A 150W TO3P

1.68

ON Semiconductor NGTD20T120F2SWK

IGBT TRENCH FIELD STOP 1200V DIE

1.67

ON Semiconductor FGB3245G2-F085

ECOSPARK2 450V IGNITION IGBT

0

Infineon Technologies IKB20N65EH5ATMA1

INDUSTRY 14

1.66

ON Semiconductor FGA3060ADF

IGBT 600V 60A 176W TO-3PN

1.66

Infineon Technologies IRGIB10B60KD1P

IGBT 600V 16A 44W TO220FP

1.65

IXYS IXYP10N65C3

IGBT 650V 30A 160W TO220

1.63

ON Semiconductor NGTD20T120F2WP

IGBT TRENCH FIELD STOP 1200V DIE

1.63