Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Microsemi Corporation APT30GN60BDQ2G

IGBT 600V 63A 203W TO247

4.92

IXYS IXGP24N120C3

IGBT 1200V 48A 250W TO220

4.91

IXYS IXGX12N90C

IGBT 900V 24A 100W PLUS247

4.84

ON Semiconductor FGH75T65UPD-F155

650V,75A FIELD STOP TRENCH IGBT

4.84

Infineon Technologies IGW50N65H5AXKSA1

IGBT 650V TO247-3

4.83

Infineon Technologies IGW50N65F5AXKSA1

IGBT 650V TO247-3

4.83

Infineon Technologies AUIRGP4062D1-E

IGBT 600V 55A 217W TO247AD

4.82

IXYS IXGH36N60B3

IGBT 600V 92A 250W TO247

4.81