Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.


IXYS IXXH30N65B4D1

IGBT

5.2

IXYS IXDH20N120

IGBT 1200V 38A 200W TO247AD

5.13

IXYS IXGT6N170

IGBT 1700V 12A 75W TO268

5.12

IXYS IXA45IF1200HB

IGBT 1200V 78A 325W TO247

5.1

IXYS IXGP15N120B

IGBT 1200V 30A 150W TO220AB

5.08

IXYS IXGA24N120C3

IGBT 1200V 48A 250W TO263

5.08

IXYS IXYH50N65C3

IGBT 650V 130A 600W TO247

5.08

IXYS IXYH40N90C3

IGBT 900V 105A 600W TO247

5.03