Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXBF9N160G

IGBT 1600V 7A 70W I4PAC

4.98

Renesas Electronics America RJH60D5BDPQ-E0#T2

IGBT 600V 75A 200W TO-247

5.26

IXYS IXXH30N60C3D1

IGBT 600V 60A 270W TO247

4.96

Infineon Technologies IRG4PC60UPBF

IGBT 600V 75A 520W TO247AC

5.06

IXYS IXGQ20N120BD1

IGBT 1200V 40A 190W TO3P

4.96

IXYS IXGA4N100

IGBT 1000V 8A 40W TO263AA

4.96

Microsemi Corporation APT35GA90B

IGBT 900V 63A 290W TO-247

4.95

Alpha & Omega Semiconductor Inc. AOK40B120M1

IGBT 1200V 40A TO-247

4.92