Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

IXYS IXGH48N60A3

IGBT 600V 120A 300W TO247

4.8

Infineon Technologies AUIRGP4062D1

IGBT 600V 55A 217W TO247AC

4.77

IXYS IXGP20N120BD1

IGBT 1200V 40A 190W TO220

4.75

Infineon Technologies IGZ75N65H5XKSA1

IGBT 650V 75A SGL TO-247-4

4.75

IXYS IXGQ20N120B

IGBT 1200V 40A 190W TO3P

4.72

STMicroelectronics STGWA15M120DF3

IGBT 1200V 30A 259W

4.72

Infineon Technologies IGW40N65H5AXKSA1

IGBT 650V TO247-3

4.69

Infineon Technologies IGW40N65F5AXKSA1

IGBT 650V TO247-3

4.69