Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGA48N60B3

IGBT 600V 300W TO263AA

4.68

IXYS IXXH30N60B3

IGBT 600V TO247

4.68

IXYS IXGH48N60B3

IGBT 600V 300W TO247AD

4.68

Infineon Technologies SGW30N60FKSA1

IGBT 600V 41A 250W TO247-3

4.67

IXYS IXGH12N100

IGBT 1000V 24A 100W TO247AD

4.65

ON Semiconductor SGF80N60UFTU

IGBT 600V 80A 110W TO3PF

4.65

IXYS IXGQ28N120B

IGBT 1200V 50A 250W TO3P

4.58

ROHM Semiconductor RGTH00TS65DGC11

IGBT 650V 85A 277W TO-247N

4.58