Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGH32N90B2

IGBT 900V 64A 300W TO247

4.44

Infineon Technologies IKW30N60TAFKSA1

IGBT 600V 60A 187W TO247-3-21

4.43

Infineon Technologies IGW50N60TFKSA1

IGBT 600V 100A 333W TO247-3

4.4

Infineon Technologies IHW30N160R2FKSA1

IGBT 1600V 60A 312W TO247-3

4.4

IXYS IXXH40N65B4

IGBT 650V 120A 455W TO247AD

4.37

IXYS IXGH12N90C

IGBT 900V 24A 100W TO247AD

4.37

IXYS IXGA20N120B3

IGBT 1200V 36A 180W TO263

4.37

Infineon Technologies IGC18T120T8QX1SA1

IGBT 1200V 15A DIE

4.37