Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXYH40N65C3D1

IGBT 650V 80A 300W TO247

5.38

IXYS IXYH30N65C3H1

IGBT 650V 60A 270W TO247

5.38

IXYS IXGH24N120C3

IGBT 1200V 48A 250W TO247

5.38

IXYS IXGH100N30C3

IGBT 300V 75A 460W TO247

5.36

IXYS IXYQ40N65C3D1

IGBT

5.32

IXYS IXGA15N120B

IGBT 1200V 30A 150W TO263AA

5.32

Infineon Technologies IKW40N65H5AXKSA1

IGBT 650V 74A 255W PG-TO247-3

5.31

Infineon Technologies IKW40N65F5AXKSA1

IGBT 650V 74A 255W PG-TO247-3

5.31