Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.


IXYS IXYH40N65C3

IGBT 650V 80A 300W TO247

5.6

IXYS IXXH40N65B4D1

IGBT

5.55

IXYS IXGH32N90B2D1

IGBT 900V 64A 300W TO247

5.49

IXYS IXA37IF1200HJ

IGBT 1200V 58A 195W TO247

5.48

IXYS IXGT32N90B2

IGBT 900V 64A 300W TO268

5.48

IXYS IXYH24N90C3

IGBT 900V 46A 240W TO247

5.45

IXYS IXGH36N60B3D1

IGBT 600V 250W TO247AD

5.45

IXYS IXGH36N60B3D4

IGBT 600V 250W TO247

5.45