Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

IXYS IXYA50N65C3

IGBT 650V 130A 600W TO263

5.43

IXYS IXYH50N65C3H1

IGBT 650V 130A 600W TO247

5.43

IXYS IXXH60N65C4

IGBT 650V 118A 455W TO247AD

5.43

IXYS IXDP35N60B

IGBT 600V 60A 250W TO220AB

5.42

IXYS IXGP20N120B

IGBT 1200V 40A 190W TO220

5.4

ON Semiconductor FGH75N60SFTU

IGBT 600V 150A 452W TO247

5.4

IXYS IXYH20N120C3

IGBT 1200V 40A 278W TO-247AD

5.39

IXYS IXYH40N65B3D1

IGBT

5.38