Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

IXYS IXGH20N120

IGBT 1200V 40A 150W TO247

6.48

IXYS IXXH60N65B4

IGBT 650V 116A 455W TO247AD

6.4

IXYS IXGT32N90B2D1

IGBT 900V 64A 300W TO268

6.46

IXYS IXXP50N60B3

IGBT

6.39

IXYS IXYH50N65C3D1

IGBT

6.31

Infineon Technologies IKZ75N65EH5XKSA1

IGBT 650V 90A W/DIO TO247-4

6.28

Infineon Technologies IKZ75N65NH5XKSA1

IGBT 650V 75A CO-PACK TO-247-4

6.28

Infineon Technologies IKFW50N60ETXKSA1

INDUSTRY 14

6.25