Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGH48N60B3D1

IGBT 600V 300W TO247

6.09

Renesas Electronics America RJH60D7ADPK-00#T0

IGBT 600V 90A 300W TO-3P

6.09

Renesas Electronics America RJH60F6DPQ-A0#T0

IGBT 600V 85A 297.6W TO247A

6.4

Renesas Electronics America RJH1CV6DPK-00#T0

IGBT 1200V 60A 290W TO-3P

6.4

IXYS IXDH35N60B

IGBT 600V 60A 250W TO247AD

6.03

Infineon Technologies SKW30N60FKSA1

IGBT 600V 41A 250W TO247-3

6.02

IXYS IXBH9N160G

IGBT 1600V 9A 100W TO247AD

6.03

IXYS IXGT50N60C2

IGBT 600V 75A 400W TO268

6.01