Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGT10N170

IGBT 1700V 20A 110W TO268

6.22

Infineon Technologies IRGP4069D-EPBF

IGBT 600V 76A 268W TO247AD

6.21

Infineon Technologies IKW50N60TAFKSA1

IGBT 600V 80A 333W TO247-3

6.18

IXYS IXXH150N60C3

IGBT 600V TO247

6.2

ON Semiconductor FGH50N3

IGBT 300V 75A 463W TO247

6.18

IXYS IXGH20N100

IGBT 1000V 40A 150W TO247

6.13

IXYS IXYH40N65C3H1

IGBT 650V 80A 300W TO247

6.09

IXYS IXGH48N60A3D1

IGBT 600V 300W TO247AD

6.09