Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGA15N100C

IGBT 1000V 30A 150W TO263AA

6.69

Infineon Technologies IKW60N60H3FKSA1

IGBT 600V 80A TO247-3

6.68

IXYS IXGT30N120B3D1

IGBT 1200V 300W TO268

6.67

Microsemi Corporation APT15GP90BDQ1G

IGBT 900V 43A 250W TO247

6.67

Microsemi Corporation APT54GA60B

IGBT 600V 96A 416W TO-247

6.63

Infineon Technologies IGC27T120T8QX1SA1

IGBT 1200V 25A DIE

6.59

IXYS IXXA50N60B3

IGBT

6.52

IXYS IXGT10N170A

IGBT 1700V 10A 140W TO268

6.52