Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Microsemi Corporation APT75GN60BG

IGBT 600V 155A 536W TO247

6.96

IXYS IXGH56N60B3D1

IGBT 600V 330W TO247

6.95

IXYS IXGT50N90B2

IGBT 900V 75A 400W TO268

6.89

IXYS IXYH40N90C3D1

IGBT 900V 90A 500W TO247

6.84

IXYS IXGH60N60C3

IGBT 600V 75A 380W TO247AD

6.82

Microsemi Corporation APT15GN120BDQ1G

IGBT 1200V 45A 195W TO247

6.81

Microsemi Corporation APT13GP120BG

IGBT 1200V 41A 250W TO247

6.78

IXYS IXGH60N60C3D1

IGBT 600V 75A 380W TO247AD

6.74