Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXYH30N120C3

IGBT 1200V 75A 500W TO247

7.25

Infineon Technologies IKFW75N60ETXKSA1

INDUSTRY 14

7.27

Microsemi Corporation APT45GR65B2DU30

INSULATED GATE BIPOLAR TRANSISTO

7.25

IXYS IXGH72N60A3

IGBT 600V 75A 540W TO247

7.21

IXYS IXXH50N60C3

IGBT 600V 100A 600W TO247AD

7.04

IXYS IXGH72N60C3

IGBT 600V 75A 540W TO247AD

7.06

Microsemi Corporation APT30GT60BRG

IGBT 600V 64A 250W TO247

7.03

STMicroelectronics STGWA15H120DF2

IGBT HB 1200V 15A HS TO247-3

7