Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Microsemi Corporation APT13GP120BDQ1G

IGBT 1200V 41A 250W TO247

7.66

STMicroelectronics STGW40S120DF3

IGBT 1200V 40A TO247

7.65

Microsemi Corporation APT30GS60BRDLG

IGBT 600V 54A 250W TO247

7.64

ON Semiconductor FGY100T65SCDT

FS3TIGBT TO247 100A 650V

7.54

Microsemi Corporation APT50GS60BRG

IGBT 600V 93A 415W TO247

7.53

Infineon Technologies IGW100N60H3FKSA1

IGBT 600V 140A TO247-3

7.52

STMicroelectronics STGWT80H65DFB

IGBT 650V 120A 469W TO3P-3L

7.5

IXYS IXGT20N120BD1

IGBT 1200V 40A 190W TO268

7.48