Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

IXYS IXGR40N60B

IGBT 600V 70A 200W ISOPLUS247

8.22

IXYS IXGR60N60C3D1

IGBT 600V 75A 170W ISOPLUS247

8.18

IXYS IXGT45N120

IGBT 1200V 75A 300W TO268

8.12

IXYS IXYT80N90C3

IGBT 900V 165A 830W TO268

8.07

IXYS IXGT72N60A3

IGBT 600V 75A 540W TO268

8.09

IXYS IXGH24N120C3H1

IGBT 1200V 48A 250W TO247AD

8.07

Infineon Technologies IKW75N60TAFKSA1

IGBT 600V 80A 428W TO247-3

8.05

Microsemi Corporation APT15GP60BDLG

IGBT 600V 56A 250W TO247

8.04