Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Microsemi Corporation APT40GR120S

IGBT 1200V 88A 500W D3PAK

8.8

IXYS IXGT28N120BD1

IGBT 1200V 50A 250W TO268

8.79

IXYS IXGQ240N30PB

IGBT 300V 240A 500W TO3P

8.76

Microsemi Corporation APT30GP60BG

IGBT 600V 100A 463W TO247

8.76

STMicroelectronics STGWT80V60DF

IGBT 600V 120A 469W TO-3P

8.72

IXYS IXYT30N65C3H1HV

IGBT 650V 60A 270W TO268HV

8.61

IXYS IXGT15N120B

IGBT 1200V 30A 180W TO268

8.61

IXYS IXGH17N100

IGBT 1000V 34A 150W TO247AD

8.61