Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGH30N120C3H1

IGBT 1200V 48A 250W TO247AD

8.61

IXYS IXGR24N120C3D1

IGBT 1200V 48A 200W ISOPLUS247

8.57

IXYS IXDR30N120D1

IGBT 1200V 50A 200W ISOPLUS247

8.55

IXYS IXBT10N170

IGBT 1700V 20A 140W TO268

8.44

STMicroelectronics STGW80H65FB-4

IGBT BIPO 650V 80A TO247

8.37

IXYS IXGT28N120B

IGBT 1200V 50A 250W TO268

8.27

ON Semiconductor FGH25N120FTDS

IGBT 1200V 50A 313W TO247

8.26

IXYS IXGT24N60B

IGBT 600V 24A TO268

8.22