Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

IXYS IXYH30N120C3D1

IGBT 1200V 66A 416W TO247

9.54

IXYS IXXH75N60C3D1

IGBT 600V 150A 750W TO247

9.32

Infineon Technologies SKW25N120FKSA1

IGBT 1200V 46A 313W TO247-3

9.29

IXYS IXDH30N120

IGBT 1200V 60A 300W TO247AD

9.17

IXYS IXGH6N170A

IGBT 1700V 6A 75W TO247AD

9.04

IXYS IXGH6N170

IGBT 1700V 12A 75W TO247

9.04

Microsemi Corporation APT64GA90B

IGBT 900V 117A 500W TO247

9.02

STMicroelectronics STGW80H65DFB-4

IGBT BIPO 650V 80A TO247

8.83