Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXYK100N65B3D1

IGBT

9.97

IXYS IXYH40N120B3

IGBT 1200V 96A 577W TO247

9.96

IXYS IXXH100N60B3

IGBT 600V 220A 830W TO247AD

9.96

Microsemi Corporation APT50GR120L

IGBT 1200V 117A 694W TO264

9.91

Infineon Technologies IKQ100N60TAXKSA1

IGBT 600V TO247-3

9.89

Microsemi Corporation APT30GP60B2DLG

IGBT 600V 100A 463W TMAX

9.88

Microsemi Corporation APT25GN120B2DQ2G

IGBT 1200V 67A 272W TMAX

9.88

IXYS IXGR35N120BD1

IGBT 1200V 54A 250W ISOPLUS247

9.75