Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGK64N60B3D1

IGBT 600V 460W TO264

10.12

Microsemi Corporation APT50GS60BRDLG

IGBT 600V 93A 415W TO247

10.1

IXYS IXGT6N170AHV

IGBT 1700V 6A 75W TO268

10.1

IXYS IXGH25N120A

IGBT 1200V 50A 200W TO247AD

10.1

IXYS FID60-06D

IGBT 600V 65A 200W I4PAC5

10.1

IXYS IXGT16N170A

IGBT 1700V 16A 190W TO268

10.05

IXYS IXGH40N120C3D1

IGBT 1200V 75A 380W TO247

9.97

IXYS IXDR30N120

IGBT 1200V 50A 200W ISOPLUS247

9.97